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Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency For electret capacitor microphone Features
* High mutual conductance gm * Low noise voltage of NV
1
+0.10 0.40 -0.05
0.12 -0.01
+0.02
3
1.50.2
2.10.1 5.80.2
2
Absolute Maximum Ratings Ta = 25C
Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gate open) Drain-gate current (Souse open) Gate-source cutoff current (Drain open) Power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Rating 20 20 2 2 2 200 -20 to +80 -55 to +150 Unit
10
(0.95)
(0.95)
2.200.15
5
(0.5)
1.90.1 2.90.2
V V mA mA mA mW C C
0.70.1
1: Drain 2: Source 3: Gate Minit3-F1 Package
Marking Symbol: 1H
Electrical Characteristics Ta = 25C 3C
Parameter Drain current Drain-sourse cutoff current (G-S short) Mutual conductance Noise voltage Voltage gain Symbol ID IDSS gm NV Gv1 Gv2 Gv3 Gv * f* Voltage gain difference Gv2 - Gv1 Gv1 - Gv3 Conditions VDS = 4.5 V, CO = 10 pF RD = 2.2 k 1% VDS = 4.5 V, VGS = 0 VD = 4.5 V, VGS = 0 f = 1 kHz VD = 4.5 V, RD = 2.2 k 1% CO = 10 pF, A-curve VD = 4.5 V, RD = 2.2 k 1% CO = 10 pF, eG = 10 mV f = 1 kHz VD = 12 V, RD = 2.2 k 1% CO = 10 pF, eG = 10 mV f = 1 kHz VD = 1.5 V, RD = 2.2 k 1% CO = 10 pF, eG = 10 mV f = 1 kHz VD = 4.5 V, RD = 2.2 k 1% CO = 10 pF, eG = 10 mV f = 1 kHz to 70 Hz 0 0 3.5 3.5 dB dB -3 0 -4.5 2 3.3 - 0.3 0 1.5 Min 100 95 700 1 600 4 Typ Max 600 480 Unit A A S V dB dB dB dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. * : Gv * f is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)
Publication date: August 2003
SJF00039AED
1
2SK1860
ID VDS
0.45 0.40 Ta = 25C VGS = 0 V
ID VGS
0.50 0.45 0.40 Ta = -25C
Yfs VGS
2.0
Forward transfer admittance Yfs (mS)
VDS = 10 V
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2
VDS = 10 V Ta = 25C
Drain current ID (mA)
0.35
Drain current ID (mA)
0.30 0.25 0.20 0.15
0.35 0.30 0.25 0.20 0.15 0.10 25C
- 0.05 V
- 0.1 V - 0.15 V
0.10 0.05 0 0 2 4 6 8 10 12 - 0.2 V
0.05
85C
0 - 0.6 - 0.5 - 0.4 - 0.3 - 0.2 - 0.1
0
0 -2.5
-2.0
-1.5
-1.0
- 0.5
0
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
Yfs ID
2.0
Forward transfer admittance Yfs (mS)
VDS = 10 V Ta = 25C
1.5
1.0
0.5
0
0
0.1
0.2
0.3
0.4
Drain current ID (mA)
2
SJF00039AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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